- Ideal for consumer and industrial applications using high-performance, non-volatile memory; extended voltage range of 3V to 5.5V now available -
SUNNYVALE, Calif., March 2, 2012 /CNW/ - Fujitsu Semiconductor America (FSA) today extended its growing portfolio of Ferroelectric memory products with the introduction of a new Ferroelectric Random Access Memory (FRAM) product series that features a wide voltage range of 3.0V to 5.5V, offering significant design flexibility for consumer and industrial applications.
The new V series includes products ranging from 16kbit to 256kbit, covering both I2C and SPI interfaces. The first two members of the series, the MB85RC16V and MB85RC64V, are now available in production quantities. The devices feature I2C serial interfaces at an operating frequency of 400kHz, covering the densities of 16kbit and 64kbit, respectively. The V series products deliver high reliability, with 10 years data retention at 85 degrees C as well as an endurance of 1 trillion (10(12)) read/write cycles. The products have a guaranteed operation over the industrial temperature range of -40 degrees C to +85 degrees C.
"The Fujitsu V series FRAMs accommodate the common CMOS voltage range of 3.3V to 5V, while allowing +10% voltage swing tolerance," said Tong Swan Pang, senior manager of marketing at Fujitsu Semiconductor America. "The wide voltage range of this new series enables system designers to consolidate their designs around a single FRAM for multiple platforms. The flexibility of the V series enhances logistical and operational efficiency, while driving component costs down."
Fujitsu plans a midyear launch of a third device, the MB85RS64V, a 64kbit FRAM with an SPI interface. Other devices incorporating 256kbit with I2C or SPI interfaces will also become available in 2012. All products of this series are available in the popular 8-pin plastic SOP packages, which are compatible with most EEPROMs.
Wide Variety of FRAMs Available from Fujitsu
Apart from the V series, Fujitsu offers a wide variety of low-voltage FRAM devices operating between 2.7 and 3.0V, which are equipped with I2C, SPI or parallel interfaces. Density levels vary from 16kbit to 4Mbit.
FRAM is the new generation of nonvolatile memory that outperforms memories like EEPROM and Flash, consumes less power, and offers higher speed and virtually unlimited endurance to multiple read-and-write operations. FRAM is non-volatile, but operates in other respects like RAM. FRAM has become an excellent alternative to EEPROM in many applications, especially those with frequent data logging functions and low power consumption, where it is essential to prevent any data loss—even in the event of a sudden power shutdown.
Fujitsu has been mass-producing FRAM for more than 10 years with a proven record of high reliability of FRAM products. In addition to standalone FRAM products, Fujitsu has embedded FRAM into CMOS circuits with an emphasis on performance and efficiency. This breakthrough storage medium is used in a variety of applications including smart cards, RFID, security ICs and many other applications that require high-performance nonvolatile memory.
For more information, visit http://us.fujitsu.com/semi/fram.
About Fujitsu Semiconductor America, Inc.
Fujitsu Semiconductor America, Inc. (FSA) is a leading designer and developer of innovative semiconductor products and solutions for new generations of consumer, communications, automotive and industrial products. FSA provides a comprehensive portfolio of high-quality, reliable semiconductor products and services throughout North and South America. Founded in 1979 and headquartered in Sunnyvale, California, Fujitsu Semiconductor America (formerly Fujitsu Microelectronics America) is a wholly owned subsidiary of Fujitsu Semiconductor Limited (FSL), Japan.
For product information, visit the company's website at http://us.fujitsu.com/semi, e-mail [email protected] or call 1-800-866-8608. For company news and updates, connect with FSA on Twitter at http://twitter.com/FujitsuSemiUS.
All product names mentioned herein are trademarks or registered trademarks of their respective owners. Information provided in this press release is accurate at time of publication and subject to change without advance notice.
SOURCE Fujitsu Semiconductor America, Inc.
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