TORONTO, Nov. 13 /CNW/ - Micromem Technologies Inc. (OTC BB: MMTIF) is
pleased to announce another major milestone has been met in the manufacturing
of their MRAM. Based on this early success the foundry has been authorized to
assemble the complete memory structure.
The Hall Sensor forms an integral component of the Micromem MRAM design.
The Hall Sensor is used to measure the external field of a magnet whose
magnetization can be reversed by generating a current in a coil.
Several Hall Cross sensor devices were manufactured at various features
sizes as we drive the overall MRAM cell feature size to the limits of the GCS
foundry. Micromem successfully manufactured and tested a Hall Cross Sensor
device that functions precisely in accordance with the University of Toronto
sensitivity model, notably the following:
- The sensor demonstrates excellent linearity
- The magnetic field reversal yields symmetrical V(Hall) within
- I (bias) reversal yields symmetrical V(Hall) within expected
"What this means for the foundry phase is that Micromem's Hall Cross
Sensor device is extremely accurate, repeatable and linear, all necessary
features for a memory design. The results have exceeded our expectations. As a
result of the tremendous performance, we plan to also use the Hall Cross
Sensor devices as credible on-wafer sensors to evaluate our optimization
efforts for the placement of the magnetic yoke structures," says Steve Van
Fleet, Project Director.
Having exceeded the test requirements on the Hall Cross Sensor device, we
have authorized the foundry to accelerate their efforts on the complete MRAM
cell manufacturing. We will have an additional update on actual memory cell
testing prior to December 25, 2007.
As a result of this positive test data we have defined the first MRAM
array sizes that we are targeting. These have been defined in concert with
some of our interested end users who will ultimately utilize our memory. Our
initial target MRAM array sizes are 40 bits, 256 bit, 512 bits and 1024 bits.
In addition to these high-speed memory size requirements, we have been
requested to design to a 16K bit memory array of low speed embedded memory.
This will be used for identification purposes only where radiation hardened is
the key parameter and typically high speed memory read write time is not
Micromem continues to meet and or exceed the foundry targets. Management
is committed to our investors to provide timely and informative press releases
as we march the company towards full commercialization.
Listing: NASD OTC-Bulletin Board - Symbol: "MMTIF"
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SEC File No: 0-26005
About Micromem Technologies Inc.
Micromem Technologies, Inc. (www.micromeminc.com) is focused on the
development of magnetic random access memory (MRAM) technology.
Statements in this news release that are not historical facts, including
statements about plans and expectations regarding products and opportunities,
demand and acceptance of new or existing products, capital resources and
future financial results are forward-looking. Forward-looking statements
involve risks and uncertainties, which may cause Micromem's actual results in
future periods to differ materially from those expressed or suggested herein.
These uncertainties and risks include, without limitation, the inherent
uncertainty of research, product development and commercialization, the impact
of competitive products and patents, our ability to fund our current and
future business strategies and respond to the effect of economic and business
conditions generally as well as other risks and uncertainties detailed from
time to time in Micromem's filings with the Securities & Exchange Commission.
There can be no guarantee that Micromem will be able to enter into any
commercial arrangements on terms that are favorable to it, or at all. For more
information, please refer to Micromem's Annual Report on Form 20-F and its
Form 6-Ks as filed with the U.S. Securities and Exchange Commission. Micromem
is under no obligation (and expressly disclaims any obligation) to update or
revise any forward-looking statements whether as a result of new information,
future events or otherwise.
For further information:
For further information: Jason Baun, Chief Information Officer,