e-Shuttle to Present the Benefits of Electron Beam Direct Write (EBDW) Jose, February 26

    EBDW Reduces Mask Costs for Prototypes, Low-Volume ASIC Development

    SUNNYVALE, Calif., Feb. 20 /CNW/ -- Leaders of e-Shuttle, Inc., the
company established by Fujitsu Limited and Advantest Corporation to provide
prototyping services for leading-edge, large-scale ICs, will present a paper
entitled "EBDW Technology for EB Shuttle at 65nm Node and Beyond" at the
annual SPIE Advanced Lithography Conference at the San Jose Convention Center,
San Jose, CA, February 24-29.
    The presentation details how e-Shuttle has developed the first prototypes
using 65-nanometer process technologies in block EDBW equipped with character
projection. The presentation will be led by Takashi Maruyama, Yoshinori
Kojima, Yasushi Takahashi and Masaki Takakuwa, who have been working with
engineers from Fujitsu Limited and Fujitsu Laboratories. The conference (Paper
6921-16) is scheduled for 4:40 pm, Tuesday, February 26.
    The paper will include details about how the application of new 300mm EB
direct with associated new process technologies at critical interconnect
layers can reduce mask design costs for logic devices at the 65nm process
node, while improving accuracy and throughput. EBDW assures customers of
higher productivity and quality than they can achieve using traditional
photographic lithography in deep-submicron processes.
    The EB direct writer is equipped with the character-projection function
known as "block exposure," which includes 12 sets of characters with 100 kinds
each, designed to improve throughput and accuracy when compared with variable
shaped beaming.
    The block-exposure method regulates beam width with the stencil mask size
to ensure the stability of the fine beam size, providing linearity and HV
differences that are not possible using variable shaped beaming.
    The presentation also will detail how e-Shuttle has tuned EBDW's modeling
parameters to achieve proximity-effect correction and eliminate the impact of
electron scattering, which deteriorates resolution.
    Mr. Maruyama also will cover e-Shuttle's plans to adapt EBDW to the 45nm
process node, to resolve the critical tradeoff between throughput and
resolution. This discussion will focus on how the electron beam density is
increased to compensate for resist sensitivity in very deep submicron
    About e-Shuttle
    Headquartered in Kawasaki, Japan, e-Shuttle, Inc. was founded by Fujitsu
Limited and Advantest Corporation on November 1, 2006 (see the press release
dated October 30, 2006) to develop EBDW technologies for 90-, 65- and
45-nanometer process technologies, and to establish and offer semiconductor
prototyping services, SiExpress(TM). For more information, visit

For further information:

For further information: Emi Igarashi, +1-408-737-5647, 
eigarash@fma.fujitsu.com, for e-Shuttle, Inc. Web Site:

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