TSMC's 28nm To Be a Full Node Process



    
    Next generation 28nm process provides first comprehensive manufacturing
    platform featuring both high-k metal gate and silicon oxynitride

    
    HSINCHU, Taiwan, R.O.C., Sept. 29 /CNW/ -- TSMC, Ltd. (TSE: 2330) (NYSE:  
TSM) today announced it plans to deliver its 28nm process as a full node
technology offering the option of both high-k metal gate (HKMG) and silicon
oxynitride (SiON) material to support different customer applications and
performance requirements.  Initial production is expected in the first quarter
of 2010.
    The 28nm node will be a full node in TSMC's manufacturing-flexible 28nm
family, so named because it is the only family of processes at these
geometries to offer either a HKMG or SiON transistor option.  Multiple
customers are working with TSMC to develop 28nm product designs.  These
collaborations have matched the most appropriate transistor material with the
desired speed, power, and cost requirements.
    "Product differentiation, faster time-to-market and investment
optimization are the three most important values TSMC delivers to our
customers. In support of these values, we are developing this comprehensive
28nm technology family so that it offers choices, depending on the customer
applications and performance requirements," said Jason Chen, vice president,
Worldwide Sales and Marketing, TSMC.
    The SiON-based 28LPT (low power / high performance) process, the family's
lowest total power and cost-effective technology, is expected to provide twice
the gate density, up to 50% more speed or 30-50% lower power consumption than
TSMCs' 40LP technology. The 28LPT process is expected to go into initial
production in the beginning of 2010 and support applications like cellular
baseband, application processors, wireless connectivity, and portable
consumer.
    TSMC's decision to build on proven SiON technology for the 28LPT process
is driven by changing wireless and portable consumer application dynamics
under unrelenting pressure for products to hit market windows.  Consumers a
few years ago, wanted low-leakage handsets that supported long battery life.
Today's consumers increasingly rely on their wireless devices for Internet
browsing, video streaming, music, mobile TV, GPS navigation, along with
traditional phone and texting services.  Active usage power consumption is now
a much larger factor in battery life.  SiON gate technology, because of its
smaller gate capacitance and therefore lower active power than HKMG, provides
a solution with lower total power, cost, and risk for power-limited
applications.
    "Our customers are really looking for a high performance, low active
power, and cost-effective technology to meet their market requirements for
their portable consumer products," said Dr. Mark Liu, senior vice president,
Advanced Technology Business, TSMC.
    The 28HP (high performance) process, TSMC's first HKMG technology, will
support performance-demanding applications such as CPU, graphic processors,
and FPGAs with twice the gate density and over 30% higher speed than TSMC's
40G process at similar power density. Going forward, the HKMG technology is
very promising for device scaling at even smaller geometries beyond 28nm.  The
28HP process is expected to enter initial production in the first half of
2010.
    TSMC's 28nm technologies are currently supported by alpha version design
kits.  The 28nm CyberShuttle(TM), a prototyping service, will begin near the
end of 2008 and features competitive cycle time and frequency.
    TSMC is working closely with customers and ecosystem partners to build a
comprehensive design infrastructure based on the company's recently unveiled
Open Innovation Platform(TM) to fully utilize the power of the 28nm technology
family for a broad range of differentiating products. The Open Innovation
Platform(TM) is a platform for innovations, hosted by TSMC and open to TSMC
customers and partners.
    
    About TSMC
    
    TSMC is the world's largest dedicated semiconductor foundry, providing
the industry's leading process technology and the foundry's largest portfolio
of process-proven libraries, IP, design tools and reference flows. The
Company's total managed capacity in 2008 is to exceed nine million (8-inch
equivalent) wafers, including capacity from two advanced 12-inch Gigafabs,
four eight-inch fabs, one six-inch fab, as well as TSMC's wholly owned
subsidiaries, WaferTech and TSMC (Shanghai), and its joint venture fab, SSMC.
TSMC is the first foundry to provide 40nm production capabilities. Its
corporate headquarters are in Hsinchu, Taiwan. For more information about TSMC
please see http://www.tsmc.com.




For further information:

For further information: Chuck Byers, Brand Management, +1-408-382-7919,
or JH Tzeng, Corporate Public Relations, +886-3-666-5028, both for TSMC

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