TORONTO, Feb. 19 /CNW/ - Micromem Technologies Inc. (OTC BB: MMTIF) is
pleased to announce its Magneto-resistive random access memory (MRAM) is a
highly probable candidate for the universal memory, characterized mainly by
high speed (read/write), high density and non-volatility. Micromem has
designed a new process architecture for MRAM.
We are pleased to announce that our foundry tests have demonstrated a
number of valuable advantages for a magnetic-based sensor and memory device:
including high sensitivity, thermal stability and simplicity and low cost
We demonstrated that hysterisis-free operation can be expected for
systems incorporating our technology, dynamic range and linear field response
is now characterized to depend upon material and geometry and the active
element of our Hall cross sensor is the intersection of the Hall bars which
can be miniaturized to the lithography limits. No change in sensitivity was
detected with the line when reduced from 10 to 0.1 micron.
Micromem now has a new and highly sensitive Hall device fabricated via a
simplified process. The company has demonstrated that a unique shape of the
device design represents the optimum concentration of the sensitivity of the
sensor, the measurement range and the overall size of the chip. Initial
testing indicates a sensitivity of 2.2 V/T with a minimal bias voltage; the
lowest detectable field is 0.2 micro-T, and the linearity of better than 1% in
the measurement range. Micromem has patented the unique shape of our sensor
with particular emphasis on magnetic yoke form factor and its orientation
relative to the Hall sensor.
In addition Micromem announces today that it has released to a third
party the design and manufacture of a high-density magnetoresisitve sensor
array. This design will focus on the innovative use of magnetism, electronics
and nanotechnology. The company believes this sensor has market value in
military, medical, forensic and human interface applications. The 256 x 256
sensor array is planned as a demonstration of the flexibility of non-invasive
capabilities of magnetic anomaly detection, combined with the ability to
measure absolute field strengths in Oersteds/Gauss.
Listing: NASD OTC-Bulletin Board - Symbol: "MMTIF"
Shares issued: 74,050,067
SEC File No: 0-26005
About Micromem Technologies Inc.
Micromem Technologies, Inc. (www.micromeminc.com) is focused on the
development of magnetic random access memory (MRAM) technology.
Statements in this news release that are not historical facts, including
statements about plans and expectations regarding products and opportunities,
demand and acceptance of new or existing products, capital resources and
future financial results are forward-looking. Forward-looking statements
involve risks and uncertainties, which may cause Micromem's actual results in
future periods to differ materially from those expressed or suggested herein.
These uncertainties and risks include, without limitation, the inherent
uncertainty of research, product development and commercialization, the impact
of competitive products and patents, our ability to fund our current and
future business strategies and respond to the effect of economic and business
conditions generally as well as other risks and uncertainties detailed from
time to time in Micromem's filings with the Securities & Exchange Commission.
There can be no guarantee that Micromem will be able to enter into any
commercial arrangements on terms that are favorable to it, or at all. For more
information, please refer to Micromem's Annual Report on Form 20-F and its
Form 6-Ks as filed with the U.S. Securities and Exchange Commission. Micromem
is under no obligation (and expressly disclaims any obligation) to update or
revise any forward-looking statements whether as a result of new information,
future events or otherwise.
For further information:
For further information: and companies interested in better
understanding the Micromem technology and participating in future field trials
are encouraged to contact Jason Baun, Chief Information Officer