Fujitsu Launches the World's First Low-Power Memory With 125 Degree C Specification for System-in-Package Products



    High temperature resistance solves thermal and cost issues in consumer
electronics products

    SUNNYVALE, Calif., May 19 /CNW/ -- Fujitsu Microelectronics America, Inc.
(FMA) today introduced two consumer FCRAM memory ICs with the world's first
operating temperature range extended to 125 degree C with DDR SDRAM
interfaces. The new, low-power memory ICs are optimized for use in
System-in-Packages (SiP) in consumer products such as digital TVs and digital
video cameras. Samples of the Fujitsu 512Mbit MB81EDS516545 and 256Mbit
MB81EDS256545 FCRAMs are available now.

    "Customers using the new FCRAM ICs combined with a System-on-Chip (SoC)
in the SiP configuration will achieve optimal performance even as the
temperature of the SiP rises with the increase in operating speed," said Tong
Swan Pang, senior marketing manager, Fujitsu Microelectronics. "Today's
digital consumer products continue to demand higher performance, higher speeds
and lower costs. SiPs that combine a memory chip with the SoC meet these
requirements, and reduce the number of components and board space, helping
lower system costs. Where rapid and flexible design is a key factor for
success in the consumer electronics market, SiPs integrate high-speed memory
and simplify design," he added.

    Conventional memory has limited SiP usage because power consumption
drives up temperatures. For example, a high-performance SoC can operate up to
a maximum of 125 degree C, but the SiP becomes inoperable at much lower
temperatures because memory has a lower temperature tolerance. One way to make
SiPs viable with conventional memory is to add a heat disperser such as a heat
sink to reduce temperatures to within operational range. But this solution
increases both cost and footprint.

    The Fujitsu 512Mbit and 256Mbit consumer FCRAM ICs feature a maximum
operating temperature of 125 degree C. Using the new FCRAMs, the SiP operates
to specification even when it is used with a SoC featuring high power
consumption - with no need to add a heat sink. (See Illustration of SiP with
conventional memory compared with the SiP with a 125 degree C-rated FCRAM,
http://www.fujitsu.com/downloads/MICRO/fma/pdf/FCRAM_SiP_Example.pdf)

    The new FCRAMs also can provide data-transfer rates more than twice the
rate of the conventional DDR SDRAM memory, while keeping power consumption
low. The 512Mbit FCRAM can reduce power consumption by up to 50 percent
compared to the equivalent conventional DDR2 SDRAM memory. As result, these
FCRAMs contribute to a 50 percent reduction of CO2 emissions that typically
emanate from the memory in digital consumer products.

    Fujitsu Microelectronics will continue to develop products with the
necessary performance and functionality for SiPs to provide solutions with
optimal value and cost for digital consumer products.
    

    Pricing and Availability

    
    Samples of the 512Mbit MB81EDS516545 and 256Mbit MB81EDS256545 are
available now. Pricing is available upon request.
    

    About Fujitsu Microelectronics America, Inc.

    
    Fujitsu Microelectronics America, Inc. (FMA) leads the industry in
innovation. FMA provides high-quality, reliable semiconductor products and
services for the wireless, automotive, consumer, and other markets throughout
North and South America. For more product information, please visit the
company's web site at http://us.fujitsu.com/micro/fcram or address e-mail to
inquiry@fma.fujitsu.com.

    All product names mentioned herein are trademarks or registered
trademarks of their respective owners.
    


    

    Key Product Features

    
    1. World's first operation up to 125 degree C
    These new FCRAMs have a maximum operating temperature of 125 degree C,
    greatly increasing the allowable power consumption within the system.
    Previous SiP solutions were characterized by overheating due to the
    combination of SoCs with high power and memory requirements. Also, the
    new FCRAMs allow the use of low-cost packaging that doesn't need high-
    temperature specifications.
    

    
    2. Low-power consumption
    The bus width has been expanded to 64 bits and the operating frequency has
    been reduced compared to previous products. Also, there is no need for
    terminating resistors, which are attached at the termination of a circuit
    wiring or a signal to prevent interference due to signal reflection. As
    a result, the power consumption of these new FCRAMs can be cut up to half
    compared with the equivalent system of two conventional DDR2 SDRAM memory
    ICs with 16-bit bus width. The new FCRAM also helps reduce memory-induced
    CO2 emissions from consumer products by about 50 percent.
    

    
    3. High-data bandwidth
    For operating temperatures of 125 degree C, by having a 64bit bus width
    and a maximum operating frequency of 200MHz, these new FCRAMs can provide
    a data transfer rate of 3.2Gbyte/second. That is two times the data rate
    of conventional DDR2 SDRAM memory. For operating temperatures of 105
    degree C and below, with an operating frequency of 216MHz, the data
    transfer rate increases to 3.46Gbyte/second.


    

    Key Specifications of the 512Mbit FCRAM, MB81EDS516545

    
     Memory Configuration           2M word x 64bit x 4 banks
     Voltage                        1.7 ~ 1.9V
     Interface                      Low Power DDR SDRAM (CMOS)
     Operating Temperature Range    -10 ~ +125 degree C
     (junction temperature)
     Burst Operating Frequency      Up to 105 degree C    216MHz (max)
                                    Up to 125 degree C    200MHz (max)
    

    
     Data Transfer Rate             Up to 105 degree C    3.46Gbyte/sec (max)
                                    Up to 125 degree C    3.2Gbyte/sec (max)
    

    Key Specifications of the 256Mbit FCRAM, MB81EDS256545

    
     Memory Configuration           1M word x 64bit x 4 banks
     Voltage                        1.7 ~ 1.95V
     Interface                      Low Power DDR SDRAM (CMOS)
     Operating Temperature Range    -10 ~ +125 degree C
     (junction temperature)
     Burst Operating Frequency      Up to 105 degree C     216MHz (max)
                                    Up to 125 degree C     200MHz (max)
    

    
     Data Transfer Rate             Up to 105 degree C     3.46Gbyte/sec (max)
                                    Up to 125 degree C     3.2Gbyte/sec (max)



    




For further information:

For further information: Emi Igarashi of Fujitsu Microelectronics
America, Inc., +1-408-737-5647, eigarash@fma.fujitsu.com; or Dick Davies of
IPRA, +1-415-652-7515, ipra@mindspring.com, for Fujitsu Microelectronics
America, Inc. Web Site: http://www.fma.fujitsu.com

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