SUNNYVALE, Calif., April 18 /CNW/ -- Fujitsu Microelectronics America,
Inc. (FMA) today announced the availability of two new 2Mbit ferroelectric
memory (FRAM) ICs, the industry's highest capacity FRAMs now in volume
The Fujitsu MB85R2001 and MB85R2002 feature non-volatile memory with
high- speed data writing, low power consumption, and the ability to provide a
high number of write cycles. They are ideal for automotive navigation systems,
multi-function printers, measuring instruments, and other advanced
applications that can use non-volatile memory to store various parameters,
record equipment operating conditions, and preserve security information.
The FRAM's high-speed data writing and the high number of available write
cycles allow its application in office equipment to store event counts or
parameters, and log every event. FRAMs allow 10 billion read/write cycles,
which corresponds to writing 30 times a second continuously for 10 years.
FRAMs also can store data for more than 10 years without a battery. In
applications such as instrumentation, the Fujitsu FRAM write mechanism ensures
that data can be written to FRAM at high speed even if the power is
interrupted even temporarily, so valuable data will not be lost.
The configuration of MB85R2001 is 256K words x 8 bits; the configuration
of MB85R2002 is 128K words x 16 bits. Both feature read access times of 100
nanoseconds (ns), and read/write cycle times of 150ns. They operate from 3V to
"FRAM technology is particularly ideal for applications that require a
high number of write cycles and low power consumption, as well as high-speed
data writing. These new FRAMs provide the increased functionality and higher
memory capacity required in new automotive, instrumentation, and other
advanced designs," said Keith Horn, chief operating officer of Fujitsu
Microelectronics America. "The new FRAMs also share the electrical
characteristics of the 1Mbit FRAMs from Fujitsu, enabling an easy migration to
the higher capacity versions with the added connection of only one address."
As a pioneer in FRAM development, Fujitsu started volume production in
1999, and reached worldwide sales in excess of 500 million chips, including
discrete memory chips as well as chips with embedded FRAM memory. Due to the
ongoing demand for larger FRAM memory, Fujitsu decided to double the memory
capacity, resulting in the development and production of the MB85R2001 and
MB85R2002. Compared to battery-backed SRAM, the elimination of battery from
FRAM simplifies production processes and removes the hassles of battery
replacement and maintenance in products using the Fujitsu FRAM. Like all other
FRAM products from Fujitsu, the MB85R2001 and MB85R2002 reduce material waste
and are environmentally friendly.
The new 2Mbit FRAM products have the same electrical characteristics and
TSOP-48 package as Fujitsu's 1Mbit FRAM products (MB85R1001, MB85R1002) that
are currently in production. With the additional connection of only one
address, a shift to the 2Mbit products has been made possible. Therefore, on
the same printed circuit board and depending on the necessary memory capacity,
either the 1Mbit or 2Mbit FRAM can be used.
The new FRAMs are available in 48-pin TSOPs now, and production pricing
is available upon request.
About Fujitsu Microelectronics America, Inc.
Fujitsu Microelectronics America, Inc. (FMA) leads the industry in
innovation. FMA provides high-quality, reliable semiconductor products and
services for the networking, communications, automotive, security and other
markets throughout North and South America. For more information about Fujitsu
memory ICs please visit http://us.fujitsu.com/micro/fram
Company names mentioned herein are registered trademarks or trademarks of
their respective owners. Information provided in this press release is
accurate at time of publication and is subject to change without advance
For further information:
For further information: Emi Igarashi of Fujitsu Microelectronics
America, Inc., +1-408-737-5647, email@example.com; or Dick Davies of
IPRA, +1-415-652-7515, firstname.lastname@example.org